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| ON Semiconductor ) Plastic Medium-Power Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. 2N6387 2N6388* *ON Semiconductor Preferred Device * High DC Current Gain -- * * * * hFE = 2500 (Typ) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) -- 2N6387 = 80 Vdc (Min) -- 2N6388 Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc -- 2N6387, 2N6388 Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60-80 VOLTS 65 WATTS 4 IIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II II I IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII I I III IIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCB VEB IC IB PD 2N6387 60 60 10 15 2N6388 80 80 10 15 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C 250 mAdc Watts W/_C Watts W/_C _C 65 0.52 PD 2.0 0.016 Operating and Storage Junction, Temperature Range TJ, Tstg -65 to +150 *MAXIMUM RATINGS 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristics Symbol RJC RJA Max Unit Thermal Resistance, Junction to Case 1.92 62.5 _C/W _C/W Thermal Resistance, Junction to Ambient Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 10 Publication Order Number: 2N6387/D 2N6387 2N6388 TA TC 4.0 80 PD, POWER DISSIPATION (WATTS) 3.0 60 TC 2.0 40 TA 1.0 20 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 Figure 1. Power Derating http://onsemi.com 2 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I III I I I II II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 10 Adc, VCE = 3.0 Vdc) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 1 0 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE - 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) Characteristic 2N6387 2N6388 http://onsemi.com 2N6387, 2N6388 2N6387, 2N6388 2N6387, 2N6388 2N6387, 2N6388 2N6387, 2N6388 2N6387, 2N6388 2N6387 2N6388 2N6387 2N6388 2N6387 2N6388 2N6387 2N6388 VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICEX |hfe| Cob hFE hfe 1000 1000 100 Min 20 60 80 -- -- -- -- -- -- -- -- -- -- -- -- 20,000 -- Max 200 300 300 3.0 3.0 2.8 4.5 2.0 3.0 5.0 1.0 1.0 -- -- -- -- mAdc mAdc mAdc Adc Unit Vdc Vdc Vdc pF -- -- 3 2N6387 2N6388 VCC + 30 V RC SCOPE 7.0 5.0 3.0 ts tf 1.0 0.7 0.3 0.2 0.1 0.07 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA TUT RB V1 APPROX + 12 V 51 D1 [ 8.0 k [ 120 0 V2 APPROX -8V 25 s t, TIME ( s) tr, tf v 10 ns DUTY CYCLE = 1.0% - 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 td 0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMPS) 5.0 10 Figure 2. Switching Times Test Circuit Figure 3. Switching Times r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 ZJC (t) = r(t) RJC RJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k t1 Figure 4. Thermal Response http://onsemi.com 4 2N6387 2N6388 20 IC, COLLECTOR CURRENT (AMPS) 10 dc 50 ms TJ = 150C 5 ms 10 s 50 s 1 ms 5.0 2.0 1.0 0.5 0.2 0.1 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 100C SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6387 2N6388 80 0.03 1.0 2.0 4.0 6.0 40 60 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown Figure 5. Active-Region Safe Operating Area 10,000 hFE, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc 300 TJ = 25C 200 C, CAPACITANCE (pF) 100 70 50 30 0.1 Cib Cob 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Small-Signal Current Gain Figure 7. Capacitance 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 25C 1000 -55C 500 300 200 TJ = 150C VCE = 4.0 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 20,000 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 1.8 1.4 1.0 4.0 A 6.0 A 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 8. DC Current Gain Figure 9. Collector Saturation Region http://onsemi.com 5 2N6387 2N6388 3.0 TJ = 25C V, VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 + 5.0 + 4.0 + 3.0 + 2.0 + 1.0 0 - 1.0 - 2.0 - 3.0 - 4.0 - 5.0 0.1 0.2 0.3 0.5 0.7 1.0 VB for VBE 25C to 150C -55C to 25C 2.0 3.0 5.0 7.0 10 *VC for VCE(sat) -55C to 25C *IC/IB hFE @ VCE + 4.0 V 3 25C to 150C IC, COLLECTOR CURRENT (AMP) V, TEMPERATURE COEFFICIENTS (mV/C) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( A) 104 103 102 101 100 100C EMITTER REVERSE VCE = 30 V FORWARD COLLECTOR TJ = 150C BASE [ 8.0 k [ 120 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region Figure 13. Darlington Schematic http://onsemi.com 6 2N6387 2N6388 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 F T S C Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR R J http://onsemi.com 7 2N6387 2N6388 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6387/D |
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